レーザーテック(株)【6920】の掲示板 2023/03/02
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2023年3月3日 01:41
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Measuring the critical dimensions of semiconductor device features becomes more challenging as photoresists get thinner with EUV and especially High-NA EUV.
To capture high-resolution images that provide accurate, sub-nanometer measurements, the CD-SEM must be able to precisely apply a narrow eBeam to the small area occupied by the extremely thin photoresist. eBeam energy interacts with photoresists, and if the landing energy is too high, the resist will shrink, distorting the pattern and creating errors. Conventional CD-SEMs cannot produce beams narrow enough to create high-resolution images at landing energies low enough to minimize interactions with the delicate High-NA photoresist.
Introducing the VeritySEM® 10 CD-SEM Metrology System
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Chipmakers use CD-SEMs (critical dimension scanning electron microscopes) to take sub-nanometer measurements of patterns once a lithography scanner transfers them from a mask to a photoresist. These measurements continuously calibrate lithography process performance to ensure the patterns are correct before they are etched into the wafer.
CD-SEMs are also used after etch to correlate intended patterns with on-wafer results. CD-SEMs thereby help control the etch process and enable a feedback loop between lithography and etch that gives engineers highly correlated data sets for holistic process tuning.