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Applied’s new VeritySEM 10 system features a unique architecture that enables low landing energy at 2X better resolution compared to conventional CD-SEMs. It also provides a 30-percent faster scan rate to further reduce interaction with the photoresist and increase throughput. The system’s industry-leading resolution and scan rate provide improved control of EUV and High-NA EUV lithography and etch processes to help chipmakers accelerate process development and maximize yield in high-volume manufacturing.
The VeritySEM 10 system is also being adopted by chipmakers for critical dimension metrology applications in 3D designs, including Gate-All-Around (GAA) logic transistors and 3D NAND memories, where the system’s back-scattered electrons enable high-resolution imaging of deep structures.
続き
Applied’s new VeritySEM 10 system features a unique architecture that enables low landing energy at 2X better resolution compared to conventional CD-SEMs. It also provides a 30-percent faster scan rate to further reduce interaction with the photoresist and increase throughput. The system’s industry-leading resolution and scan rate provide improved control of EUV and High-NA EUV lithography and etch processes to help chipmakers accelerate process development and maximize yield in high-volume manufacturing.
The VeritySEM 10 system is also being adopted by chipmakers for critical dimension metrology applications in 3D designs, including Gate-All-Around (GAA) logic transistors and 3D NAND memories, where the system’s back-scattered electrons enable high-resolution imaging of deep structures.